Product Overview

The ABB 5SHX0660F0002 is a high-power Reverse-Conducting Integrated Gate-Commutated Thyristor (RC-IGCT) module, purpose-built for medium and high-voltage power conversion applications. Manufactured at ABB's semiconductor center of excellence in Lenzburg, Switzerland, this press-pack device represents the convergence of thyristor low conduction losses and IGBT high-speed switching capability, making it the preferred switching element for the most demanding industrial power electronics systems . The ABB 5SHX0660F0002 is commonly supplied with the associated gate driver assembly referenced by part number 3BHE022333R0101, which forms a complete "cartridge" integrating the semiconductor pellet and gate drive electronics . The ABB 5SHX0660F0002 serves as the core power switch in ABB's ACS6000 and ACS5000 medium-voltage drive families, performing the critical function of converting DC link voltage into variable-frequency AC power for large motors . Its reverse-conducting architecture integrates the freewheeling diode directly into the silicon wafer, reducing component count and stray inductance within the inverter leg . The press-pack design—a ceramic-metal housing clamped between two water-cooled heatsinks with 10–20 kN of axial force—eliminates bond wires and solder layers found in conventional IGBT modules, resulting in exceptional thermal cycling endurance and a service life measured in millions of load cycles . The ABB 5SHX0660F0002 is also deployed in UNITROL 6000 excitation systems for large synchronous generators, PCS6000 wind turbine converters, HVDC transmission stations, and STATCOM reactive power compensators .  

Technical Specifications

Parameter Name	Parameter Value
Product Model	5SHX0660F0002
Associated Part Number	3BHE022333R0101
Manufacturer	ABB (Switzerland/Sweden)
Product Type	Reverse-Conducting IGCT (Press-Pack)
Technology	IGCT (Integrated Gate-Commutated Thyristor)
Repetitive Blocking Voltage (VDRM)	4500 V – 5500 V
Continuous Turn-off Current (ITGQM)	660 A – 900 A
Peak Turn-off Current	Up to 5000 A (short duration)
Switching Frequency	Up to 500 Hz – 1 kHz
On-State Voltage (VTM)	< 2.5 V at nominal current
dv/dt Immunity	> 2000 V/µs
di/dt Capability	> 1000 A/µs
Gate Control Interface	Fiber Optic (V-Pin / ST connector)
Gate Unit Power Supply	24V DC (from gate driver board)
Required Clamping Force	10 – 20 kN
Cooling Method	Direct Liquid (water/glycol) or Forced Air
Junction Temperature Range	-40°C to +125°C
Thermal Resistance (junction-case)	Approx. 0.03 K/W
Mounting Type	Press-pack disc (clamped in stack assembly)
Package Diameter	Approx. 190 mm
Weight	1.5 – 4.2 kg (depending on gate unit integration)
Isolation Voltage	≥ 10 kV

 

Main Features and Advantages

Integrated Reverse-Conducting Architecture: The ABB 5SHX0660F0002 integrates the freewheeling diode and the main thyristor on a single silicon wafer. This reverse-conducting (RC) design eliminates the need for external anti-parallel diodes in the inverter phase leg, reducing component count, stray inductance, and overall system size. For maintenance engineers, this means fewer individual parts to fail and simpler power stack assemblies compared to discrete thyristor-diode solutions . Press-Pack Reliability and Thermal Cycling Endurance: Unlike IGBT modules with wire bonds and solder layers vulnerable to thermal fatigue, the ABB 5SHX0660F0002 features a press-pack construction where the silicon disc is clamped between two molybdenum electrodes under 10–20 kN of force. This design provides a "fail-short" failure mode—a short circuit rather than an open circuit—which is essential for series-connected valve applications. The absence of bond wires and solder joints translates to an operational lifetime measured in millions of thermal cycles, ideal for applications with frequent load variations like rolling mills and mine hoists . Snubberless Switching Capability: The ABB 5SHX0660F0002 is designed for hard-switched, snubberless operation across the entire 4500V blocking voltage range. The integrated gate unit enables extremely fast commutation with di/dt immunity exceeding 1000 A/µs, eliminating the need for bulky and expensive RC snubber circuits required by traditional GTO thyristors. For system integrators, this translates to smaller cabinet footprints, reduced component costs, and improved overall converter efficiency . Fiber Optic Control Interface with EMI Immunity: Gate control signals for the ABB 5SHX0660F0002 are transmitted via fiber optic V-Pin or ST connectors, providing complete galvanic isolation between the low-voltage control system and the high-voltage power stage. This optical link ensures deterministic switching execution even in environments with extreme electromagnetic interference (EMI) from adjacent power switching devices. The ABB 5SHX0660F0002 can switch dv/dt rates exceeding 2000 V/µs without compromising signal integrity, ensuring reliable operation in the most demanding industrial power conversion systems