Technical Specifications
| Parameter | Value |
|---|---|
| Product Model | 5SHX1060H0003 |
| Ordering Code | 3BHB020538R0001 |
| Manufacturer | ABB Switzerland Ltd., Semiconductors |
| Product Type | RC-IGCT (Reverse-Conducting Integrated Gate-Commutated Thyristor) Power Module |
| Technology | Integrated Gate-Commutated Thyristor with monolithic anti-parallel diode |
| Repetitive Peak Off-State Voltage (V_DRM) | 5500 V |
| Permanent DC-Link Voltage (V_DC) | 3300 V (for 100 FIT failure rate, 0–115°C) |
| Repetitive Peak Off-State Current (I_DRM) | ≤ 20 mA |
| Max. Average On-State Current (I_TAVM) | 355 A (half-sine, T_C = 85°C) |
| Max. RMS On-State Current (I_TRMS) | 555 A |
| Industrial Nominal Continuous Current | 1060 A (drive-bridge application rating) |
| Max. Peak Non-Repetitive Surge Current (I_TSM) | 7.5 kA (t_p = 10 ms, T_j = 115°C) |
| Limiting Load Integral (I²t) | 286 × 10³ A²s (t_p = 10 ms) |
| On-State Voltage (V_T) | ≤ 3.45 V at I_T = 900 A, T_j = 115°C |
| Threshold Voltage (V_T0) | 1.65 V |
| Slope Resistance (r_T) | 2 mΩ |
| Turn-On Delay Time (t_don) | ≤ 3 µs (V_D = 3300 V, T_j = 115°C) |
| Rise Time (t_r) | ≤ 1 µs (I_T = 900 A, di/dt = 290 A/µs) |
| Min. On-Time | 10 µs |
| Turn-On Energy per Pulse (E_on) | ≤ 0.5 J |
| Max. Rate of Rise of On-State Current (di/dt_crit) | 340 A/µs (f = 500 Hz, T_j = 115°C) |
| Trigger Interface | Direct fiber-optic control (optically isolated digital gate signal) |
| Gate Drive Voltage | +15 V (turn-on) / -10 to -15 V (turn-off) |
| Gate Driver Power Supply | DC 24 V ±10% |
| Mounting Force | 18–22 kN |
| Pole-Piece Diameter | 63 mm ±0.1 mm |
| Housing Thickness | 26 mm ±0.5 mm |
| Surface Creepage Distance | ≥ 33 mm |
| Air Strike Distance | ≥ 13 mm |
| IGCT Length | 239 mm (+0/-0.5 mm) |
| IGCT Height | 62.5 mm ±1.0 mm |
| IGCT Width | 200 mm (+0/-0.5 mm) |
| IGCT Weight | 1.7 kg |
| Complete Assembly Weight (with gate driver) | Approx. 1.93 kg |
| Cooling Method | Direct liquid cooling (de-ionized water or water-glycol, 4–8 L/min per module) |
| Recommended Coolant Inlet Temperature | 15–45°C |
| Max. Pressure Drop Across Cooling Interface | 0.5 bar |
| Operating Junction Temperature | 0°C to +115°C |
| Operating Ambient Temperature | -25°C to +85°C |
| Storage Temperature | -40°C to +85°C |
| Protection Class | Hermetic press-pack, IP00 (installed inside sealed drive cubicle) |
| Certifications | CE, RoHS compliant |
| Country of Origin | Sweden |
| HS Code | 8541300000 |
| Primary Applications | ACS5000, ACS6000, PCS6000 medium-voltage drives |
Main Features and Advantages
Monolithic RC-IGCT integration: The 5SHX1060H0003 houses both the gate-commutated thyristor pellet and its anti-parallel freewheeling diode in a single silicon die within one press-pack housing. Compared with discrete “IGBT + FWD” stacks, this monolithic architecture removes interconnection inductance, enables snubberless turn-off in many 6 kV topologies, and shrinks the inverter cubicle footprint by eliminating the external freewheeling diode. The 3BHB020538R0001 assembly further integrates the dedicated gate driver board, presenting a single coordinated component that replaces “chip + driver + snubber” with one field-replaceable module.
Superior switching performance with ultra-fast turn-off: The 5SHX1060H0003 delivers hard-switching capabilities with minimal tail current, achieving turn-on delay times ≤3 µs and rise times ≤1 µs. Turn-off is completed in under 2 µs, supporting PWM switching frequencies up to several kilohertz — significantly faster than conventional GTO thyristors while maintaining lower conduction losses than IGBTs at megawatt power levels. This unique performance envelope makes the 5SHX1060H0003 the definitive choice for high-power, high-frequency medium-voltage drive bridges.
Exceptional surge and fault withstand capability: With a peak non-repetitive surge current rating of 7.5 kA (t_p = 10 ms) and a limiting load integral (I²t) of 286 × 10³ A²s, the 5SHX1060H0003 absorbs severe fault currents that would destroy conventional IGBT modules. The integrated gate driver in the 3BHB020538R0001 assembly responds to overcurrent, overvoltage, undervoltage, and overtemperature faults within microseconds, latching fault codes and uploading alarm signals via the fiber-optic link to trigger upstream drive protection.
Direct liquid cooling for maximum thermal efficiency: The press-pack construction of the 5SHX1060H0003 provides direct thermal coupling between the silicon junction and the cooling interface, achieving junction-to-case thermal resistance below 0.02 K/W. Operating with de-ionized water or water-glycol mixtures at flow rates of 4–8 L/min per module and inlet temperatures of 15–45°C, the device sustains continuous rated current with minimal temperature rise. The hermetic seal and directional liquid cooling interface make the 5SHX1060H0003 ideally suited for 24/7 continuous operation in harsh industrial environments.
Fiber-optic isolated gate control for EMI immunity: Trigger signals to the 5SHX1060H0003 are transmitted exclusively via direct fiber-optic connection, providing complete galvanic isolation between the high-voltage power circuit and the low-voltage control system. This fiber-optic interface eliminates electromagnetic interference susceptibility — a critical advantage in drive cubicles dominated by high dV/dt switching transients — and enables unambiguous, noise-free gate command delivery even in the most electrically hostile environments.
Hermetic press-pack reliability: The 5SHX1060H0003 employs a hermetically sealed disc-type press-pack package, clamped with a mounting force of 18–22 kN between the power unit’s pressure plates. This construction eliminates wire bonds (the classic failure point in conventional IGBT modules), provides double-sided cooling, and delivers inherent vibration resistance for long service life in mining, marine, and heavy industrial applications. The 68 mm diameter pole piece and 63 mm pole-piece diameter ensure uniform current distribution across the silicon die.
Snubberless operation and simplified system design: Thanks to its ultra-fast turn-off and excellent device consistency, the 5SHX1060H0003 supports snubberless turn-off in many 6 kV series topologies, drastically reducing the number of auxiliary components in the inverter bridge. System designers benefit from simplified cubicle layouts, reduced bill-of-materials complexity, and lower cooling requirements — translating directly into higher overall drive efficiency (often exceeding 98%) and improved reliability.
Seamless ACS5000/ACS6000/PCS6000 platform compatibility: The 5SHX1060H0003 (3BHB020538R0001) integrates natively into ABB’s ACS5000 water-cooled medium-voltage drive platform as a field-replaceable power module. The gate driver interface complies with ABB’s proprietary control architecture, ensuring plug-and-play integration with existing drive controllers. The press-pack design enables hot-swap replacement during scheduled maintenance windows without draining the cooling system — a transformative capability for facilities where drive downtime carries severe financial penalties.
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