ABB 5SHX2645L0004 3BHL000389P0104 High-Power RC-IGCT Module for ACS6000 Drives

Product Overview

The ABB 5SHX2645L0004 (ordering number 3BHL000389P0104) is a high-power Reverse-Conducting Integrated Gate-Commutated Thyristor (RC-IGCT) module engineered by ABB for the most demanding medium and high-voltage power conversion applications. As a member of ABB's 5SHX family of press-pack IGCTs, the ABB 5SHX2645L0004 serves as the core switching element within the power stacks of ABB's ACS1000, ACS3000, ACS5000, and ACS6000 medium-voltage drives, as well as STATCOM systems and UNITROL 6000 excitation power cabinets. The ABB 5SHX2645L0004 combines a 91mm SPT buffer-layer silicon wafer with advanced hard-drive gate technology to deliver exceptional electrical performance. Its integrated design, featuring both the IGCT and a freewheeling diode in a single press-pack housing, significantly reduces component count, minimizes stray inductance, and enhances overall system reliability—making the ABB 5SHX2645L0004 an optimal choice for Neutral Point Clamped (NPC) three-level inverter topologies. Now discontinued by the manufacturer, the ABB 5SHX2645L0004 remains an essential spare for maintaining legacy high-power drive systems globally.

 

Technical Specifications

Parameter Name Value
Product Model 5SHX2645L0004
Ordering Number 3BHL000389P0104 (also 3BHB003154R0101)
Manufacturer ABB (Hitachi Energy Semiconductor)
Product Type Reverse-Conducting IGCT (RC-IGCT)
Repetitive Reverse Blocking Voltage (VRRM) 4500 V
Rated On-State Current (ITAV) 1850–4000 A (varies by data source/thermal conditions)
Repetitive Peak Turn-Off Current (IGQM) ≥2600 A
Surge Current (ITSM, 10ms) 28–48 kA
On-State Voltage (VTM @ Rated Current) ≤2.1–3.5 V
Turn-Off Time ≤2 µs
dv/dt Tolerance >5000 V/µs
di/dt Tolerance >1000–2000 A/µs
Gate Drive Voltage +20V / -20V (hard drive, fiber optic isolation)
Silicon Wafer Size 91mm (SPT buffer layer)
Thermal Resistance (Rth(j-c)) 0.007–0.012 K/W
Cooling Method Double-sided direct water cooling (deionized, 3-6 L/min per stack)
Clamping Force 25–40 kN (varies by stack configuration)
Operating Junction Temperature -40°C to +125°C
Package Type Ceramic press-pack / compression disc
Weight Approx. 2.6 kg

 

 

Main Features and Advantages

Reverse-Conducting Integration for Compact Design
The ABB 5SHX2645L0004 features Reverse-Conducting (RC) technology, integrating the IGCT switch and its freewheeling diode within a single press-pack housing. This integration reduces component count in NPC three-level inverter legs from three to two devices per phase, resulting in fewer power semiconductors, reduced busbar complexity, and lower stray inductance—directly improving system efficiency and reliability. The ABB 5SHX2645L0004 thus offers a more compact and robust power stack design compared to discrete diode-IGCT solutions.

Superior Switching Performance and Low Losses
Engineered with SPT buffer-layer technology, the ABB 5SHX2645L0004 delivers a high snubberless turn-off rating, eliminating bulky external snubber circuits and minimizing power losses. With a turn-off time of ≤2 µs and high dv/dt and di/dt tolerance, the ABB 5SHX2645L0004 supports switching frequencies up to 500 Hz in typical medium-voltage drive applications. Its hard-drive gate architecture provides stable, deterministic switching under high-power conditions, ensuring optimal performance for demanding grid and motor control applications.

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