
Technical Specifications
| Parameter | Value |
|---|---|
| Product Model | ABB 5SHY3545L0009 |
| Associated Part Numbers | 3BHB013085R0001 (gate driver), 3BHB020720R0002 (gate unit) |
| Manufacturer | ABB (Hitachi Energy High-Power Semiconductors) |
| Device Type | Asymmetric Integrated Gate-Commutated Thyristor (IGCT) |
| Repetitive Peak Off-State Voltage (VDRM) | 4500 V (DC/AC) |
| Max. Controllable Current (ITGQM) | 3500 A typical; up to 4500 A RMS in select configurations |
| Peak Turn-Off Current | 6000 A typical |
| Surge Current (10 ms) | 55 kA |
| On-State Voltage Drop (VT) | ≤ 1.5–2.1 V @ rated current |
| Turn-Off Time (tq) | < 3 μs |
| Switching Frequency | ≤ 2 kHz (conventional); datasheet limit 1600 Hz |
| Gate Trigger Current | ≤ 150 mA @ 125 °C junction |
| Gate Drive Voltage | 20 V ±10% (provided by 3BHB013085R0001) |
| Integrated Components | GCT semiconductor die + low-inductance gate driver |
| Control Interface | Fiber-optic transmitter/receiver pairs |
| Snubber Requirement | None (snubberless turn-off) |
| Thermal Resistance (junction-to-case) | 0.008–0.01 K/W |
| Cooling Method | Double-sided forced water cooling (press-pack) |
| Package Type | Circular ceramic press-pack, fail-short mode |
| Mounting Clamping Force | 15–20 kN uniform pressure (precision torque fixture) |
| Operating Junction Temperature | -40 °C to +125 °C |
| Storage Temperature | -55 °C to +175 °C |
| Dimensions (L × W × H) | Approx. 133–439 × 90–173 × 33–41 mm (variant dependent) |
| Weight | 2.8–3.4 kg |
| MTBF | > 100,000 h @ heavy-duty drive service |
| Certifications | UL, CE, IEC 60747-6, IEC 61803, RoHS |
| Typical Application Power | ≈ 21 MW per module set in 6 kV MV drive (ACS6000) |
| Compatible Systems | ABB ACS6000, SFC, UNITROL 6000, MEGADRIVE-LCI |
| Lifecycle Status | Mature; available as new surplus / factory-sealed spare |
Main Features and Advantages
Snubberless Turn-Off for Compact Converter Design
The defining characteristic of the ABB 5SHY3545L0009 is its ability to commutate high current without external snubber circuits. The integrated low-inductance gate driver and transparent anode design enable a turn-off time of less than 3 μs, safely hard-switching the load and eliminating the bulky capacitors and resistors that traditional GTO thyristors require. This snubberless operation reduces converter cabinet footprint by up to 50% versus conventional thyristor designs and improves system efficiency by removing snubber losses entirely.
Superior Power Density and Low Conduction Losses
With a 4500 V blocking capability and 3500–4500 A current handling, the ABB 5SHY3545L0009 delivers exceptional power density. Its on-state voltage drop of ≤ 1.5–2.1 V at rated current translates to remarkably low conduction losses—approximately 10% better than market-average competitors. This efficiency directly reduces heat generation, allowing smaller heat sinks and lower cooling infrastructure burden in multi-megawatt drive installations.
Press-Pack Reliability with Fail-Short Mode
The ceramic press-pack architecture of the ABB 5SHY3545L0009 offers two decisive advantages. First, double-sided cooling extracts heat from both anode and cathode surfaces, maintaining low junction temperatures even under continuous full-load operation. Second, in the rare event of device failure, the IGCT fails as a short circuit rather than an open circuit. In redundant converter topologies, this “fail-short” characteristic allows upstream fuses to isolate the faulty leg while potentially keeping the rest of the drive operational—a feature highly prized in continuous-process industries such as metallurgy, paper manufacturing, and power generation.






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