TOSHIBA 2N3A3620-B

Product name: TOSHIBA 2N3A3620-B module, also known as NPN type silicon single junction field effect transistor, is a NPN type silicon single junction field effect transistor produced by Toshiba Corporation. The module is mainly used to amplify or switch electronic signals, and can be used in various electronic devices and circuits.

Product features:

High current: Rated current up to 3A.
High voltage: The rated breakdown voltage can reach 30V.
Low noise: Low noise, suitable for audio amplification applications.
High reliability: Made of high quality materials and durable.
Product parameters:

Parameter value unit
Model 2N3A3620-B

Type NPN silicon single junction FET
Rated current 3A
Rated breakdown voltage 30V
Maximum grid drain current 100nA
Grid-source threshold voltage -2V to -4V
Maximum power dissipation 1.5W
Operating temperature -55°C to 150°C
Storage temperature -65°C to 175°C